J.K. Rath

Rath, J., Verkerk, A. D., Schropp, R. E. I., Boussadkat, B., & Goedheer, W. J. (2012). A calibration method for accurate prediction of amorphous to nanocrystalline transition from line intensities of optical emission spectrum. Journal of Non-Crystalline Solids, 358, 1995-1999. https://doi.org/10.1016/j.jnoncrysol.2011.12.001

Rath, J., Verkerk, A. D., Liu, Y., Brinza, M., Goedheer, W. J., & Schropp, R. E. I. (2009). Gas phase considerations for the growth of device quality nanocrystalline silicon at high rate. Elsevier Science Bv. Retrieved from <Go to ISI>://000267635500011

Verkerk, A. D., de Jong, M. M., Rath, J., Brinza, M., Schropp, R. E. I., Goedheer, W. J., … Smirnov, A. S. (2009). Compensation of decreased ion energy by increased hydrogen dilution in plasma deposition of thin film silicon solar cells at low substrate temperatures. Elsevier Science Bv. Retrieved from <Go to ISI>://000267635500014

Gordijn, A., Vanecek, M., Goedheer, W. J., Rath, J., & Schropp, R. E. I. (2006). Influence of pressure and plasma potential on high growth rate microcrystalline silicon grown by very high frequency plasma enhanced chemical vapour deposition. Japanese Journal of Applied Physics Part 1-Regular Papers Brief Communications & Review Papers, 45, 6166-6172. Retrieved from <Go to ISI>://000240512800022 (Original work published 2006)

Rath, J., Franken, R. H. J., Gordijn, A., Schropp, R. E. I., & Goedheer, W. J. (2004). Growth mechanism of microcrystalline silicon at high pressure conditions. Journal of Non-Crystalline Solids, 338-40, 56-60. Retrieved from <Go to ISI>://000222219000011 (Original work published 2004)

Biebericher, A. C., van der Weg, W., Rath, J., Akdim, M., & Goedheer, W. J. (2003). Gas-efficient deposition of device-quality hydrogenated amorphous silicon using low gas flows and power modulated radio-frequency discharges. Journal of Vacuum Science & Technology A, 21, 156-166. Retrieved from <Go to ISI>://000182598200023 (Original work published 2003)

Biebericher, A. C., van der Weg, W., Goedheer, W. J., & Rath, J. (2002). Mechanism of argon treatment on a growing surface in layer-by-layer deposition of hydrogenated amorphous silicon. Journal of Non-Crystalline Solids, 299, 74-78. Retrieved from <Go to ISI>://000175757400016 (Original work published 2002)