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Mechanism of argon treatment on a growing surface in layer-by-layer deposition of hydrogenated amorphous silicon

Label Value
Author
Year of Publication
2002
Journal
Journal of Non-Crystalline Solids
Volume
299
Number of Pages
74-78
Date Published
04/2002
ISBN Number
0022-3093
Accession Number
ISI:000175757400016
URL
PId
104969411b047e0b0fc61a5077a86176
Journal Article
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Citation
Biebericher, A. C., van der Weg, W., Goedheer, W. J., & Rath, J. (2002). Mechanism of argon treatment on a growing surface in layer-by-layer deposition of hydrogenated amorphous silicon. Journal of Non-Crystalline Solids, 299, 74-78. Retrieved from <Go to ISI>://000175757400016 (Original work published 2002)