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Gas-efficient deposition of device-quality hydrogenated amorphous silicon using low gas flows and power modulated radio-frequency discharges

Label Value
Author
Year of Publication
2003
Journal
Journal of Vacuum Science & Technology A
Volume
21
Number
1
Number of Pages
156-166
Date Published
01/2003
ISBN Number
0734-2101
Accession Number
ISI:000182598200023
URL
PId
d6dedd31a0679902b4388ee059319226
Journal Article
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Citation
Biebericher, A. C., van der Weg, W., Rath, J., Akdim, M., & Goedheer, W. J. (2003). Gas-efficient deposition of device-quality hydrogenated amorphous silicon using low gas flows and power modulated radio-frequency discharges. Journal of Vacuum Science & Technology A, 21, 156-166. Retrieved from <Go to ISI>://000182598200023 (Original work published 2003)