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Free-Electron Laser-Induced Bleaching of the Intersubband Absorption in Semiconductor Quantum-Wells

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Abstract

The intensity dependent intersubband absorption in GaAs/AlGaAs quantum wells with a subband separation smaller than the optical phonon energy has been measured with a pulsed far infrared free electron laser (FELIX). Complete bleaching of the absorption is observed at I = 100 kW/cm2. When fitted with a two-level system, the saturation intensity is found to be 10 kW/CM2, which corresponds to a characteristic time constant of 1-2 ps. Possible interpretations are discussed in the situation of finite FEL pulse width.

Year of Publication
1994
Journal
Nuclear Instruments & Methods in Physics Research Section a-Accelerators Spectrometers Detectors and Associated Equipment
Volume
341
Number
1-3
Number of Pages
178-180
Date Published
03/1994
ISBN Number
0168-9002
DOI
PId
df8fd44324361fbb02f330929e53cde9
Journal Article
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Citation
Murdin, B. N., Helm, M., Pidgeon, C. R., Geerinck, K. K., Hovenyer, N., Wenckebach, W. T., … van Amersfoort, P. W. (1994). Free-Electron Laser-Induced Bleaching of the Intersubband Absorption in Semiconductor Quantum-Wells. Nuclear Instruments & Methods in Physics Research Section A-Accelerators Spectrometers Detectors and Associated Equipment, 341, 178-180. https://doi.org/10.1016/0168-9002(94)90343-3 (Original work published 1994)