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Sputtering yields of Ru, Mo, and Si under low energy Ar+ bombardment

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Abstract

Ion sputtering yields for Ru, Mo, and Si under Ar+ ion bombardment in the near-threshold energy range have been studied using an in situ weight-loss method with a Kaufman ion source, Faraday cup, and quartz crystal microbalance. The results are compared to theoretical models. The accuracy of the in situ weight-loss method was verified by thickness-decrease measurements using grazing incidence x-ray reflectometry, and results from both methods are in good agreement. These results provide accurate data sets for theoretical modeling in the near-threshold sputter regime and are of relevance for (optical) surfaces exposed to plasmas, as, for instance, in extreme ultraviolet photolithography.

Year of Publication
2009
Journal
Journal of Applied Physics
Volume
106
Number
5
Number of Pages
6
Date Published
Sep
Type of Article
Article
ISBN Number
0021-8979
Accession Number
ISI:000269850300134
URL
PId
f7b032b0fe554719fdaf1b1e92f63c84
Alternate Journal
J. Appl. Phys.
Journal Article
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