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Excite-Probe Determination of the Intersubband Lifetime in Wide Gaas/Algaas Quantum-Wells Using a Far-Infrared Free-Electron Laser
| Label | Value |
|---|---|
| Author | |
| Abstract |
A direct excite-probe semiconductor lifetime determination in the picosecond regime has been made for the first time in the far infrared. We have used an RF-linac-pumped free-electron laser to determine the relaxation rate associated with intersubband absorption in GaAs/AlGaAs quantum wells having a subband separation smaller than the optical phonon energy. The measurement yields a relaxation lifetime of 40 +/- 5 ps. This is compared with a variety of other results obtained with less direct techniques. |
| Year of Publication |
1994
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| Journal |
Semiconductor Science and Technology
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| Volume |
9
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| Number |
8
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| Number of Pages |
1554-1557
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| Date Published |
08/1994
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| ISBN Number |
0268-1242
|
| DOI | |
| PId |
25940c42f870d0e5e4a0ce6d87d65b75
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Journal Article
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|
| Download citation |
Citation
Murdin, B. N., Knippels, G. M., van der Meer, A. F. G., Pidgeon, C. R., Langerak, C. J., Helm, M., … Wenckebach, W. T. (1994). Excite-Probe Determination of the Intersubband Lifetime in Wide Gaas/Algaas Quantum-Wells Using a Far-Infrared Free-Electron Laser. Semiconductor Science and Technology, 9, 1554-1557. https://doi.org/10.1088/0268-1242/9/8/019 (Original work published 1994)