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Solid-phase crystallization of ultra high growth rate amorphous silicon films
| Label | Value |
|---|---|
| Author | |
| Abstract |
In this paper, we report on the deposition of amorphous silicon (a-Si:H) films at ultra-high growth rate (11-60 nm/s) by means of the expanding thermal plasma technique, followed by solid-phase crystallization (SPC). Large-grain (similar to 1.5 mu m) polycrystalline silicon was obtained after SPC of high growth rate (similar to 25 nm/s) deposited a-Si:H films. The obtained results are discussed by taking into account the impact of the a-Si:H microstructure parameter R* as well as of its morphology, on the final grain size development. (C) 2012 American Institute of Physics. [http://dx.doi.org/10.1063/1.4717951] |
| Year of Publication |
2012
|
| Journal |
Journal of Applied Physics
|
| Volume |
111
|
| Issue |
10
|
| Number of Pages |
5
|
| Date Published |
05/2012
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| Type of Article |
Article; Proceedings Paper
|
| ISBN Number |
0021-8979
|
| DOI | |
| PId |
48167db43dd121371ee7159412269b83
|
| Alternate Journal |
J. Appl. Phys.
|
Journal Article
|
|
| Download citation |
Citation
Sharma, K., Ponomarev, M. V., Verheijen, M. A., Kunz, O., Tichelaar, F. D., van de Sanden, M. C. M., & Creatore, M. (2012). Solid-phase crystallization of ultra high growth rate amorphous silicon films. Journal of Applied Physics, 111(10), 5. https://doi.org/10.1063/1.4717951 (Original work published 2012)