J. N. Hovenier

Pavlov, S. G., Bottger, U. ., Hovenier, J. N., Abrosimov, N. V., Riemann, H. ., Zhukavin, R. K., … Hubers, H. W. (2009). Stimulated terahertz emission due to electronic Raman scattering in silicon. Applied Physics Letters, 94, 3. Retrieved from <Go to ISI>://000265738700012 (Original work published 2025)

Pavlov, S. G., Hubers, H. W., Bottger, U. ., Zhukavin, R. K., Shastin, V. N., Hovenier, J. N., … Riemann, H. . (2008). Terahertz Raman laser based on silicon doped with phosphorus. Applied Physics Letters, 92, 3. Retrieved from <Go to ISI>://000253761500011 (Original work published 2025)

Pavlov, S. G., Hubers, H. W., Haas, P. M., Hovenier, J. N., Klaassen, T. O., Zhukavin, R. K., … Redlich, B. . (2008). Evidence of noncascade intracenter electron relaxation in shallow donor centers in silicon. Physical Review B, 78, 7. Retrieved from <Go to ISI>://000260574500052 (Original work published 2025)

Zhukavin, R. K., Shastin, V. N., Pavlov, S. G., Hübers, H.-W. ., Hovenier, J. N., Klaassen, T. O., & van der Meer, A. F. G. (2007). Terahertz gain on shallow donor transitions in silicon. Journal of Applied Physics, 102, 093104.

Pavlov, S. G., Hubers, H. W., Hovenier, J. N., Klaassen, T. O., Carder, D. A., Phillips, P. J., … Shastin, V. N. (2006). Stimulated terahertz stokes emission of silicon crystals doped with antimony donors. Physical Review Letters, 96. Retrieved from <Go to ISI>://000234969300102 (Original work published 2025)

Zhukavin, R. K., Gaponova, D. M., Muravjov, A. V., Orlova, E. E., Shastin, V. N., Pavlov, S. G., … van der Meer, A. F. G. (2003). Laser transitions under resonant optical pumping of donor centres in Si : P. Applied Physics B-Lasers and Optics, 76, 613-616. Retrieved from <Go to ISI>://000183531900020 (Original work published 2025)

Shastin, V. N., Zhukavin, R. K., Orlova, E. E., Pavlov, S. G., Rummeli, M. H., Hubers, H. W., … van der Meer, A. F. G. (2002). Stimulated terahertz emission from group-V donors in silicon under intracenter photoexcitation. Applied Physics Letters, 80, 3512-3514. Retrieved from <Go to ISI>://000175464100016 (Original work published 2025)

Planken, P. C. M., Pellemans, H. P. M., van Son, P. C., Hovenier, J. N., Klaassen, T. O., Wenckebach, W. T., … Langerak, C. . (1996). Using far-infrared two-photon excitation to measure the resonant-polaron effect in the Reststrahlen band of GaAs:Si. Optics Communications, 124, 258-262. https://doi.org/10.1016/0030-4018(95)00676-1 (Original work published)

Planken, P. C. M., van Son, P. C., Hovenier, J. N., Klaassen, T. O., Wenckebach, W. T., Murdin, B. N., & Knippels, G. . (1995). Far-Infrared Picosecond Time-Resolved Measurement of the Free-Induction Decay in Gaas-Si. Physical Review B, 51, 9643-9647. https://doi.org/10.1103/PhysRevB.51.9643 (Original work published)

Planken, P. C. M., van Son, P. C., Hovenier, J. N., Klaassen, T. O., Wenckebach, W. T., Murdin, B. N., & Knippels, G. . (1995). Preliminary-Results on Short-Pulse High-Power Free-Electron Laser Spectroscopy in N-Gaas. Infrared Physics & Technology, 36, 333-339. https://doi.org/10.1016/1350-4495(94)00077-x (Original work published 2025)