Extreme UV lithography: A new laser plasma target concept and fabrication of multilayer reflection masks

Results are reported on the development of a laser plasma source and the fabrication of multilayer reflection masks for extreme ultra-violet lithography (EUVL). A new concept of a target for a laser plasma source is presented including experimental evidence of elimination of macro debris particles from the source. Concerning the fabrication of reflection masks, a new method is described involving a two-layer absorber system protecting the Mo-Si structure against etching damage.